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MODELING AND SIMULATION OF LONG TERM DEGRADATION AND LIFETIME OF DEEP-SUBMICRON MOS DEVICE AND CIRCUIT
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TitleMODELING AND SIMULATION OF LONG TERM DEGRADATION AND LIFETIME OF DEEP-SUBMICRON MOS DEVICE AND CIRCUIT
AuthorCUI, ZHI
KeywordsMOSFET
reliability
lifetime
Hot-Carrier
modeling
RF
Verilog-A
simulation
RF
Cadence
AbstractLong-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work, a simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. With more accurate extrapolation method, we present a direct and accurate approach to modeling empirically the 0.18-ìm MOS reliability, which can predict the MOS lifetime as a function of drain voltage and channel length. With the further study on physical mechanism of MOS device degradation, experimental results indicated that the widely used power-law model for lifetime estimation is inaccurate for deep submicron devices. A better lifetime prediction method is proposed for the deep-submicron devices. We also develop a Spice-like reliability model for advanced radio frequency RF MOS devices and implement our reliability model into SpectreRF circuit simulator via Verilog-A HDL (Hardware Description Language). This RF reliability model can be conveniently used to simulate RF circuit performance degradation
AdviserLiou, Juin J.
PublisherUniversity of Central Florida
DegreePh.D.
Degree DisciplineDepartment of Electrical and Computer Engineering
Degree GrantorEngineering and Computer Science
Degree ProgramElectrical Engineering
Graduation Date2005-05-01
TypeDoctoral dissertation
Access LevelCampus - Allow Only UCF Community Access
Release Date2015-01-31
RepositoryUniversity Archives
Repository CollectionElectronic Theses and Dissertations
IdentifierCFE0000476
Access Linkhttp://purl.fcla.edu/fcla/etd/CFE0000476

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