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CLASS-E CASCODE POWER AMPLIFIER ANALYSIS AND DESIGN FOR LONG TERM RELIABILITY
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Title
CLASS-E
CASCODE
POWER
AMPLIFIER
ANALYSIS
AND
DESIGN
FOR
LONG
TERM
RELIABILITY
Author
Kutty, Karan
Keywords
power amplifier
class-E
cascode
gate oxide
breakdown
oxide breakdown
model
TSMC
voltage stress
zero voltage switching
Abstract
This
study
investigated
the
Class-E
power
amplifier
operating
at
5.2
GHz.
Since
the
operation
of this
amplifier
applies
a
lot
of
stress
on the
switching
transistor
, a
cascode
topology
was
applied
in
order
to
reduce
the
drain-source
voltage
stress.
Such
an
amplifier
was
designed
and
optimized
in
order
to
improve
stability
,
power
added
efficiency
, and
matching.
A
layout
for the
said
design
was then
created
to be
fabrication-ready
using
the
TSMC
0.18
um
technology.
Post-layout
simulations
were
performed
in
order
to
realize
a
more
realistic
circuit
performance
with the
layout
design
in
mind.
Long-term
stress
effects
,
such
as
oxide
breakdown
, on the
key
transistors
were
modeled
and
simulated
in
order
to
achieve
an
understanding
of how
leakage
currents
affect
the
overall
circuit
performance.
Simulated
results
were
compared
and
contrasted
against
theoretical
understanding
using
derived
equations.
Recommendations
for
future
advancements
were
made
for
modification
and
optimization
of the
circuit
by the
application
of
other
stress
reduction
strategies
,
variation
in the
class-E
topology
, and
improvement
of the
driver
stage.
Adviser
Yuan, Jiann-Shiun
Publisher
University
of
Central
Florida
Degree
M.S.E.E.
Degree Discipline
School of Electrical Engineering and Computer Science
Degree Grantor
Engineering and Computer Science
Degree Program
Electrical Engineering MSEE
Graduation Date
2010-01-01
Type
Master's thesis
Access Level
Public - Allow Worldwide Access
Release Date
2010-08-18
Repository
University Archives
Repository Collection
Electronic Theses and Dissertations
Identifier
CFE0003360
Access Link
http://purl.fcla.edu/fcla/etd/CFE0003360
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