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| Title | DESIGN AND MODELING OF RADIATION HARDENED LDMOSFET FOR SPACE CRAFT POWER SYSTEMS |
| Author | Shea, Patrick
|
| Keywords | Heavy ions
MOS Devices
MOSFETs
Power FETs
Power Semiconductor Devices
radiation hardening
radiation effects
Semiconductor devices
Semiconductor device modeling
Semiconductor device radiation effects
|
| Abstract | NASA missions require innovative power electronics system and component solutions with long life capability, high radiation tolerance, low mass and volume, and high reliability in space environments. Presently vertical double-diffused MOSFETs (VDMOS) are the most widely used power switching device for space power systems. It is proposed that a new lateral double-diffused MOSFET (LDMOS) designed at UCF can offer improvements in total dose and single event radiation hardness, switching performance, development and manufacturing costs, and total mass of power electronics systems. Availability of a hardened fast-switching power MOSFET will allow space-borne power electronics to approach the current level of terrestrial technology, thereby facilitating the use of more modern digital electronic systems in space. It is believed that the use of a p+/p-epi starting material for the LDMOS will offer better hardness against single-event burnout (SEB) and single-event gate rupture (SEGR) when compared to vertical devices fabricated on an n+/n-epi material. By placing a source contact on the bottom-side of the p+ substrate, much of the hole current generated by a heavy ion strike will flow away from the dielectric gate, thereby reducing electrical stress on the gate and decreasing the likelihood of SEGR. Similarly, the device is hardened against SEB by the redirection of hole current away from the base of the device's parasitic bipolar transistor. Total dose hardness is achieved by the use of a standard complementary metal-oxide semiconductor (CMOS) process that has shown proven hardness against total dose radiation effects. |
| Adviser | Shen, John
|
| Publisher | University of Central Florida |
| Degree | M.S.E.E.
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| Degree Discipline | School of Electrical Engineering and Computer Science
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| Degree Grantor | Engineering and Computer Science
|
| Degree Program | Electrical Engineering MSEE
|
| Graduation Date | 2007-01-01 |
| Type | Master's thesis
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| Access Level | Public - Allow Worldwide Access
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| Release Date | 2007-11-01 |
| Repository | University Archives
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| Repository Collection | Electronic Theses and Dissertations
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| Identifier | CFE0001966 |
| Access Link | http://purl.fcla.edu/fcla/etd/CFE0001966 |