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Investigation of PN Junction Delineation Resolution using Electron Beam Induced Current
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TitleInvestigation of PN Junction Delineation Resolution using Electron Beam Induced Current
AuthorHontgas, Christopher Hayden
KeywordsEBIC
surface recombination velocity
AbstractThis dissertation will investigate electron beam induced current (EBIC) for determining semiconductor material and device parameters. While previous experimental work on PN junction delineation using EBIC with the scanning electron microscope has resulted in resolution to approximately 10 nm, theoretical study shows the potential use of EBIC for higher resolution (nanometer) PN junction and FET channel length delineation using the transmission electron microscope. Theoretical arguments using computer simulations of electron beam generation volume, collection probability and EBIC were performed and are presented for the purpose of determining EBIC use in a 300 keV transmission electron microscope (TEM) for PN junction depth determination. Measured results indicate that by measuring thin semiconductor samples with high surface recombination velocity and by using a narrow, high-energy electron beam in the STEM mode of a transmission electron microscope, nanometer resolution may be possible. The practical and experimental limits of beam energy and semiconducting material thermal damage will be discussed.
AdviserMalocha, Donald
PublisherUniversity of Central Florida
DegreePh.D.
Degree DisciplineSchool of Electrical Engineering and Computer Science
Degree GrantorEngineering and Computer Science
Degree ProgramElectrical Engineering PhD
Graduation Date2007-12-01
TypeDoctoral dissertation
Access LevelPublic - Allow Worldwide Access
Release Date2007-12-01
RepositoryUniversity Archives
Repository CollectionElectronic Theses and Dissertations
IdentifierCFE0001900
Access Linkhttp://purl.fcla.edu/fcla/etd/CFE0001900

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