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QUANTUM DOT BASED MODE-LOCKED SEMICONDUCTOR LASERS AND APPLICATIONS
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TitleQUANTUM DOT BASED MODE-LOCKED SEMICONDUCTOR LASERS AND APPLICATIONS
AuthorKim, Jimyung
KeywordsQuantum Dot
Semiconductor Laser
Mode-lock
Injection Locking
AbstractIn this dissertation, self-assembled InAs/InGaAs quantum dot Fabry-Pà  à ©rot lasers and mode-locked lasers are investigated. The mode-locked lasers investigated include monolithic and curved two-section devices, and colliding pulse mode-locked diode lasers. Ridge waveguide semiconductor lasers have been designed and fabricated by wet etching processes. Electroluminescence of the quantum dot lasers is studied. Cavity length dependent lasing via ground state and/or excited state transitions is observed from quantum dot lasers and the optical gain from both transitions is measured. Stable optical pulse trains via ground and excited state transitions are generated using a grating coupled external cavity with a curved two-section device. Large differences in the applied reverse bias voltage on the saturable absorber are observed for stable mode-locking from the excited and ground state mode-locking regimes. The optical pulses from quantum dot mode-locked lasers are investigated in terms of chirp sign and linear chirp magnitude. Upchirped pulses with large linear chirp magnitude are observed from both ground and excited states. Externally compressed pulse widths from the ground and excited states are 1.2 ps and 970 fs, respectively. Ground state optical pulses from monolithic mode-locked lasers e.g., two-section devices and colliding pulse mode-locked lasers, are also studied. Transformed limited optical pulses (~4.5 ps) are generated from a colliding pulse mode-locked semiconductor laser. The above threshold linewidth enhancement factor of quantum dot Fabry-Pà  à ©rot lasers is measured using the continuous wave injection locking method. A strong spectral dependence of the linewidth enhancement factor is observed around the gain peak. The measured linewidth enhancement factor is highest at the gain peak, but becomes lower 10 nm away from the gain peak. The lowest linewidth enhancement factor is observed on the anti-Stokes side. The spectral dependence of the pulse duration from quantum dot based mode-locked lasers is also observed. Shorter pulses and reduced linear chirp are observed on the anti-Stokes side and externally compressed 660 fs pulses are achieved in this spectral regime. A novel clock recovery technique using passively mode-locked quantum dot lasers is investigated. The clock signal (~4 GHz) is recovered by injecting an interband optical pulse train to the saturable absorber section. The excited state clock signal is recovered through the ground state transition and vice-versa. Asymmetry in the locking bandwidth is observed. The measured locking bandwidth is 10 times wider when the excited state clock signal is recovered from the ground state injection, as compared to recovering a ground state clock signal from excited state injection.
AdviserDelfyett, Peter
PublisherUniversity of Central Florida
DegreePh.D.
Degree DisciplineOptics and Photonics
Degree GrantorOptics and Photonics
Degree ProgramOptics PhD
Graduation Date2010-01-01
TypeDoctoral dissertation
Access LevelPublic - Allow Worldwide Access
Release Date2010-08-18
RepositoryUniversity Archives
Repository CollectionElectronic Theses and Dissertations
IdentifierCFE0003295
Access Linkhttp://purl.fcla.edu/fcla/etd/CFE0003295

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