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REDISTRIBUTION OF MANGANESE ION IMPLANTED IN SILICON
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TitleREDISTRIBUTION OF MANGANESE ION IMPLANTED IN SILICON
AuthorShunmugavelu, Arun Kumar
Keywordsion implantation
silicon
SIMS
AbstractIon implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles.
AdviserAn, Linan
PublisherUniversity of Central Florida
DegreeM.S.
Degree DisciplineDepartment of Mechanical, Materials and Aerospace Engineering
Degree GrantorEngineering and Computer Science
Degree ProgramMaterials Science & Engr MSMSE
Graduation Date2007-12-01
TypeMaster's thesis
Access LevelPublic - Allow Worldwide Access
Release Date2007-12-01
RepositoryUniversity Archives
Repository CollectionElectronic Theses and Dissertations
IdentifierCFE0001909
Access Linkhttp://purl.fcla.edu/fcla/etd/CFE0001909

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